Performance of Electron Power Tubes Comparison with Solid-State Devices

Performance of Electron Power Tubes Comparison with Solid-State Devices

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On: 07 Nop, 2017

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Power grid tubes are traditionally used for generation and amplification of power at radio frequencies; for modulation, switching, and rectification; and formerly, for low power level applications including receivers and early computers. Solid-state devices and packages have eliminated tubes from all low-power-level applications where information processing is the objective, and they are becomeing widely used where up to 2 kW of CW power is required for radio transmission below about 2 Ghz. At much higher power levels, power tubes remain the ecomonical choice and are likely to remain so for the forseeable future.

Fig. 9 shows the RF power obtainable from various devices as a function frequency. Data are taken from manufactures catalogs and other published information. It is clear that in terms of maximum CW power obtainable, a single power tube device is many orders of magnitude more powerful than a single solid-state device over the whole frequency range. This situation not likely to change. It exists because of the fundamental physical distinction between the properties of electrons moving in a vacuum and electron moving in solid material , and the properties of the media themselves.

This can be seen from the following discussion.

Radio frequency generators are really converters of DC to RF power. The key elements are:

A. A DC power supply

B. An RF resonant circuit with Q greater than approximately 5

C. A source of electrons

D. A means of bunching electrons and accelerating the bunches

E. A means for interaction between the bunches of electrons and the resonant circuit so that energy is extracted from the electrons and transferred via the circuit (which, like a flywheel, stores energy) to a useful load such as an antenna or a substance to be heated. (See Fig.10) 

Hybrid Solid State Relay SSR Circuit Diagram

A solid-state relay (SSR) is an ON-OFF control device in which the load current is conducted by one or more semiconductors – e.g., a power transistor, an SCR, or a TRIAC. It is an electronic switch, which, unlike an electromechanical relay, contains no moving parts.

Car Circuit Protection Devices and System

The following article discussing about car circuit protection devices and systems written by Kevin R. Sullivan, professor of automotive technology at Skyline Collage.

4 Channel Stereo Power Amplifier

4-Channel Stereo Power Amplifier has remote controlled switching circuit, the power amplifier will power-ON automatically by turning cassette deck or tuner ON. Turn off the car stereo switch immediately and wait for a few seconds, then turn on the car stereo again. This will re-trigger the power amplifier ON mode. In case thermal protection in the power amplifier once started to work, you must wait to re-trigger for approximately twenty minutes to cool it down. Note that this amplifier has a BTL output stage; the negative leads must be connected to the-terminal of the correct speakers.

20W Car Radio Power Amplifier using TDA2005

The TDA2005 is class B dual audio power amplifier package specifically designed for car radio application. This device has high output power (PO = 10 + 10 W@RL = 2W, d = 10% ; PO = 20W@RL = 4Ohm , d = 1%) and high reliability package. You can easily design car radio power booster amplifiers using this device. The TDA2005 provides a high current capability (up to 3.5 A) and that can drive very low impedance loads (down to 1.6Ohm in stereo applications) obtaining an output power of more than 20 W(bridge configuration).

The Basic Theory of Power MOSFET

Power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle large amounts of power. The metal oxide semiconductor field effect transistor (MOSFET) is based on the original field-effect transistor introduced in the 70s. Beside diagram  shows the device schematic, transfer characteristics and device symbol for a MOSFET.

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